2 inch double-sided polished monocrystalline silicon wafer/resistivity 1-10 Ohm per centimeter/ thickness of 400um |
2 inch double-sided polished monocrystalline silicon wafer/resistivity 1-10 Ohm per centimeter/ thickness of 400um |
2 inch double-sided polished monocrystalline silicon wafer/resistivity 1-10 Ohm per centimeter/ thickness of 400um |
2 inch double-sided polished monocrystalline silicon wafer/resistivity 1-10 Ohm per centimeter/ thickness of 400um |
2 inch double-sided polished monocrystalline silicon wafer/resistivity 1-10 Ohm per centimeter/ thickness of 400um |
2 inch double-sided polished monocrystalline silicon wafer/resistivity 1-10 Ohm per centimeter/ thickness of 400um |
2 inch double-sided polished monocrystalline silicon wafer/resistivity 1-10 Ohm per centimeter/ thickness of 400um |
2 inch double-sided polished monocrystalline silicon wafer/resistivity 1-10 Ohm per centimeter/ thickness of 400um |

2 inch double-sided polished monocrystalline silicon wafer/resistivity 1-10 Ohm per centimeter/ thickness of 400um |

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2 inch double-sided polished monocrystalline silicon wafer/resistivity 1-10 Ohm per centimeter/ thickness of 400um

Описание товара

 Product Specifications:

1 Material: high purity silicon

2 Size: 2 inch

3 Diameter and Tolerance: 50.8 ± 0.3mm

4 Thickness: 400um

5 Model: P type

6 Resistivity: 1-10 / Ω ∙ cm

7 Direction: <100>

8 Polished: double-sided polished

9. Main applications: PVD / CVD coating substrate, magnetron sputtering, XRD, SEM, sample atomic force growth, infrared spectroscopy, fluorescence spectroscopy analysis substrate, substrate, molecular beam epitaxial growth semiconductor crystal X Ray analysis.

 

   1456237

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